Title :
Bandgap tuning of visible laser material
Author :
Hamilton, C.J. ; Kowalski, O.P. ; McIlvaney, K. ; Bryce, A.C. ; Marsh, J.H. ; Button, C.C.
Author_Institution :
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
fDate :
4/2/1998 12:00:00 AM
Abstract :
A reliable impurity free technique for quantum well intermixing is reported in the GaInP-AlGaInP material system which has enabled bandgap shifts up to 91 meV to be achieved in standard laser structures. Oxide stripe lasers fabricated from the intermixed material had an emission wavelength of 646 nm compared to a wavelength of 676 nm for as-grown material
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser tuning; quantum well lasers; 646 nm; GaInP-AlGaInP; III-V semiconductors; bandgap shifts; bandgap tuning; emission wavelength; impurity free technique; oxide stripe lasers; quantum well intermixing; standard laser structures; visible laser material;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19980434
