Author :
Ustinov, V.M. ; Zhukov, A.E. ; Egorov, A.Y. ; Kovsh, A.R. ; Zaitsev, S.V. ; Gordeev, N.Y. ; Kopchatov, V.I. ; Ledentsov, Nikolay N. ; Tsatsulnikov, A.F. ; Kopev, P.S. ; Alferov, Z.I. ; Ruvimov, S.S. ; Liliental-Weber, Z. ; Bimberg, Dieter
Abstract :
Self-organised InAs quantum dots inserted in an (In,Ga)As matrix lattice matched to an InP substrate are used as an active region in the injection laser. Low threshold (11.4 A/cm2) lasing at 1.894 μm (77 K) via the states of the quantum dots is obtained. A material gain of the order of 104 cm-1 is estimated
Keywords :
III-V semiconductors; indium compounds; quantum well lasers; semiconductor quantum dots; (In,Ga)As matrix; 1.9 micron; InAs-InGaAs; InP; InP substrate; injection laser; lattice matching; material gain; self-organised InAs quantum dot; threshold current density;
