Title :
High-Performance Light-Erasable Memory and Real-Time Ultraviolet Detector Based on Unannealed Indium–Gallium–Zinc–Oxide Thin-Film Transistor
Author :
Chen, Wei-Tsung ; Zan, Hsiao-Wen
Author_Institution :
Dept. of Photonics, Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
A light-erasable memory and a real-time ultraviolet (UV) detector were developed from an amorphous indium-gallium-zinc-oxide (IGZO) thin-film transistor fabricated at room temperature without post-annealing. The natural defects within the IGZO or at the dielectric interface serve as electron traps to support a writing operation (switching down the channel conductance). A negative gate bias accompanied by UV illumination performs an erasing operation (switching up the channel conductance). After the writing/erasing of the proposed memory, an on/off ratio greater than 104 was maintained for a testing duration of 10 000 s. A real-time UV detector was also developed, and a light/dark ratio of roughly 104 was demonstrated.
Keywords :
annealing; memory architecture; thin film transistors; ultraviolet detectors; In-Ga-Zn; UV illumination; amorphous indium-gallium-zinc-oxide thin film transistor; dielectric interface; electron traps; high performance light-erasable memory; light/dark ratio; negative gate bias; post annealing; real time ultraviolet detector; real-time UV detector; room temperature; time 10000 s; unannealed indium-gallium-zinc-oxide thin film transistor; Annealing; Detectors; Electron traps; Lighting; Thin film transistors; Writing; Indium–gallium–zinc–oxide (IGZO); memory; photodetector and room temperature;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2011.2171316