DocumentCode :
1371514
Title :
Effect of intervalence band absorption on the refractive index of p-doped InSb
Author :
Carroll, M. ; Blood, P. ; Ashley, T. ; Elliott, C.T.
Author_Institution :
Dept. of Phys. & Astron., Cardiff Univ., UK
Volume :
147
Issue :
3
fYear :
2000
fDate :
6/1/2000 12:00:00 AM
Firstpage :
157
Lastpage :
162
Abstract :
Kramers-Kronig analysis has been applied to the calculated intervalence band absorption (IVA) spectrum of p-doped InSb, calculated using 4-band Kane theory, to determine its effect on the refractive index. In the region of the band gap, IVA is found to cause a reduction in the refractive index. Other components contributing to the refractive index have also been calculated for purposes of comparison, and it is found that this reduction due to IVA is comparable to that caused by the change in the conduction-valence band absorption spectrum of p-type samples of the same doping density. It is, however, much smaller than the reductions in the refractive index caused by changes in the absorption spectrum in similarly doped n-type samples, due to the Moss-Burstein shift and free carrier absorption. The implications of these results for laser design are discussed
Keywords :
III-V semiconductors; Kramers-Kronig relations; absorption coefficients; conduction bands; energy gap; indium compounds; infrared spectra; k.p calculations; narrow band gap semiconductors; refractive index; valence bands; 4-band Kane theory; InSb; Kramers-Kronig analysis; Moss-Burstein shift; absorption spectrum; band gap; conduction-valence band absorption spectrum; doped n-type samples; doping density; free carrier absorption; intervalence band absorption; intervalence band absorption spectrum; laser design; p-doped InSb; p-type samples; refractive index;
fLanguage :
English
Journal_Title :
Optoelectronics, IEE Proceedings -
Publisher :
iet
ISSN :
1350-2433
Type :
jour
DOI :
10.1049/ip-opt:20000280
Filename :
860906
Link To Document :
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