DocumentCode
1371515
Title
Avalanche breakdown and breakdown luminescence in p-π-n GaN diodes
Author
Osinsky, A. ; Shur, M.S. ; Gaska, R. ; Chen, Q.
Author_Institution
APA Optics Inc., Blane, MN, USA
Volume
34
Issue
7
fYear
1998
fDate
4/2/1998 12:00:00 AM
Firstpage
691
Lastpage
692
Abstract
The authors report the observation of electric breakdown in graded p-π-n GaN photodiodes. The breakdown is accompanied by microplasma formation. The photocurrent strongly increases at the breakdown voltages, demonstrating a potential use of these devices as avalanche photodiodes (APDs)
Keywords
III-V semiconductors; avalanche breakdown; avalanche photodiodes; electroluminescence; gallium compounds; semiconductor plasma; GaN; avalanche breakdown; avalanche photodiode; breakdown luminescence; graded p-π-n GaN photodiode; microplasma formation; photocurrent;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19980535
Filename
673805
Link To Document