DocumentCode :
1371525
Title :
Multi-stacked quantum dot resonant-cavity photodetector operating at 1.06 μm
Author :
Baklenov, O. ; Nie, H. ; Anselm, K.A. ; Campbell, J.C. ; Streetman, B.G.
Author_Institution :
Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
Volume :
34
Issue :
7
fYear :
1998
fDate :
4/2/1998 12:00:00 AM
Firstpage :
694
Lastpage :
695
Abstract :
A resonant-cavity pin photodiode with two quantum dot absorbing regions is described. Each absorbing region consists of a stack of five self-assembled, quantum-dot layers, that are formed by the deposition of six monolayers of In0.5Ga0.5As with GaAs spacer layers. To optimise the responsivity, the quantum dot stacks are placed at the antinodes of the cavity. The peak efficiency is 65% at 1.06 μm with a spectral bandwidth of 1.3 nm
Keywords :
photodetectors; 1.06 micron; 65 percent; In0.5Ga0.5As-GaAs; multi-stacked quantum dot resonant-cavity photodetector; pin photodiode; self-assembled layer; spectral bandwidth;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19980487
Filename :
673807
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1371525
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