Title :
Scaling Trends in SET Pulse Widths in Sub-100 nm Bulk CMOS Processes
Author :
Gadlage, Matthew J. ; Ahlbin, Jonathan R. ; Narasimham, Balaji ; Bhuva, Bharat L. ; Massengill, Lloyd W. ; Reed, Robert A. ; Schrimpf, Ronald D. ; Vizkelethy, Gyorgy
Author_Institution :
NSWC Crane, Crane, IN, USA
Abstract :
Digital single-event transient (SET) measurements in a bulk 65-nm process are compared to transients measured in 130-nm and 90-nm processes. The measured SET widths are shorter in a 65-nm test circuit than SETs measured in similar 90-nm and 130-nm circuits, but, when the factors affecting the SET width measurements (in particular pulse broadening and the parasitic bipolar effect) are considered, the actual SET width trends are found to be more complex. The differences in the SET widths between test circuits can be attributed in part to differences in n-well contact area. These results help explain some of the inconsistencies in SET measurements presented by various researchers over the past few years.
Keywords :
CMOS analogue integrated circuits; CMOS digital integrated circuits; ion beam effects; SET measurements; SET pulse widths; SET width measurements; bulk CMOS processes; digital single-event transient; ion radiation effects; n-well contact area; scaling trends; test circuit; CMOS technology; Pulse measurements; Radiation effects; Semiconductor process modeling; Single event upset; Transient analysis; Heavy ions; ion radiation effects; single event transients (SETs); single event upset (SEU);
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2010.2071881