Title :
Continuous wave operation of type-II interband cascade lasers
Author :
Bradshaw, J.L. ; Bruno, J.D. ; Pham, J.T. ; Wortman, D.E. ; Yang, R.Q.
Author_Institution :
US Army Res. Lab., Adelphi, MD, USA
fDate :
6/1/2000 12:00:00 AM
Abstract :
Continuous wave operation of interband cascade lasers based on type-II InAs/Ga(In)Sb heterostructures is reported. The interband cascade lasers, consisting of 23 cascaded active regions, lased at wavelengths near 4 μm. Continuous wave operation was observed from 60-110 μm wide by 1.02 mm long mesa-stripe lasers at temperatures up to 70 K
Keywords :
III-V semiconductors; gallium compounds; indium compounds; laser beams; quantum well lasers; waveguide lasers; 1.02 mm; 4 mum; 60 to 110 mum; 70 K; InAs; InAs-GaInSb; InAs-GaSb; InAs-InSb; InAs/Ga(In)Sb heterostructures; cascaded active regions; continuous wave operation; interband cascade lasers; mesa-stripe lasers; type-II heterostructures; type-II interband cascade lasers; wavelengths;
Journal_Title :
Optoelectronics, IEE Proceedings -
DOI :
10.1049/ip-opt:20000299
