DocumentCode :
1371532
Title :
Optical modulators at 604 nm using strain balanced InGaP/lnGaP MQWs
Author :
Vogt, T.J. ; Thiagarajan, P. ; Fastenau, J.M. ; Robinson, G.Y.
Author_Institution :
Dept. of Electr. Eng., Colorado State Univ., Fort Collins, CO, USA
Volume :
34
Issue :
7
fYear :
1998
fDate :
4/2/1998 12:00:00 AM
Firstpage :
696
Lastpage :
697
Abstract :
A reflection modulator using strain-compensated InzGa 1-zP/InyGa1-yP (z≠y) MQWs in a Fabry-Perot cavity is reported. A contrast ratio of 4.3:1 with an insertion loss of 3.4 dB was achieved at a wavelength of 604 nm
Keywords :
Fabry-Perot resonators; III-V semiconductors; electro-optical modulation; gallium compounds; indium compounds; semiconductor quantum wells; 3.4 dB; 604 nm; Fabry-Perot cavity; InGaP-InGaP; contrast ratio; insertion loss; optical modulator; reflection modulator; strain balanced InGaP/lnGaP MQW; strain compensation;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19980507
Filename :
673808
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1371532
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