Title :
InAs/InAs(P,Sb) quantum-well laser structure for the midwavelength infrared region
Author :
Christol, P. ; Bigenwald, P. ; Wilk, A. ; Joullié, A. ; Gilard, O. ; Carrère, H. ; Lozes-Dupuy, F. ; Behres, A. ; Stein, A. ; Kluth, J. ; Heime, K. ; Skouri, E.M.
Author_Institution :
Fac. des Sci., Lab. de Phys. des Mater., Avignon, France
fDate :
6/1/2000 12:00:00 AM
Abstract :
Strained InAs1-xSbx(0<x<0.22) quantum wells with InAs, InAsP, or InAsPSb barrier layers have been grown by metal-organic vapour-phase deposition on InAs substrates. Their photoluminescence and electroluminescence were studied at 20 K. The photoluminescence peak wavelength evolution with the antimony composition x and the nature of the barrier were theoretically predicted in a satisfactory manner under the assumption of a type-II band alignment for the InAsSb/InAs system with a valence band ratio Qv =-1.30. This hypothesis leads to a type-IIa band alignment for the arsenic-rich InAsSb/InAsP system. Starting from this result, a “W” laser structure, consisting of ten periods of InAsSb/InAsP/InAsSb/InAsPSb multiquantum wells in the active region, a broadened InAsPSb waveguide, and AlAsSb cladding layers, is proposed for room-temperature emission near 3.3 μm
Keywords :
III-V semiconductors; MOCVD; claddings; electroluminescence; indium compounds; laser beams; photoluminescence; quantum well lasers; vapour phase epitaxial growth; waveguide lasers; 20 K; 3.3 mum; AlAsSb cladding layers; As rich system; InAs; InAs barrier layers; InAs substrates; InAs/InAs(P,Sb) quantum-well laser structure; InAsP; InAsP barrier layers; InAsPSb; InAsPSb barrier layers; InAsPSb waveguide; InAsSb; InAsSb-InAs; InAsSb-InAsP; InAsSb-InAsPSb; InAsSb/InAs system; Sb composition; W laser structure; active region; electroluminescence; metal-organic vapour-phase deposition; midwavelength infrared region; multiquantum wells; photoluminescence; photoluminescence peak wavelength evolution; room-temperature emission; type-II band alignment; type-IIa band alignment; valence band ratio;
Journal_Title :
Optoelectronics, IEE Proceedings -
DOI :
10.1049/ip-opt:20000479
