• DocumentCode
    1371546
  • Title

    Effect of PMA on effective fixed charge in thermally grown oxide on 6H-SiC

  • Author

    Shi, Yan ; Luo, Yanbin ; Campi, J. ; Yan, Feng ; Lee, Yong K. ; Zhao, Jian H.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Rutgers Univ., Piscataway, NJ, USA
  • Volume
    34
  • Issue
    7
  • fYear
    1998
  • fDate
    4/2/1998 12:00:00 AM
  • Firstpage
    698
  • Lastpage
    700
  • Abstract
    The effect of post-metallisation annealing (PMA) on the effective fixed charge in thermally grown SiO2 on 6H-SiC has been systematically studied. It is found that under a carefully controlled and optimised PMA condition, it is possible to reduce the effective fixed charge density for both p-type and n-type samples. The study covers an annealing temperature range 400-600°C in forming gas (5% hydrogen in nitrogen) for both p-type and n-type 6H-SiC. The optimum annealing conditions are reported
  • Keywords
    annealing; oxidation; silicon compounds; wide band gap semiconductors; 400 to 600 C; 6H-SiC; PMA; SiC; SiO2; effective fixed charge; post-metallisation annealing; thermally grown oxide;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19980444
  • Filename
    673810
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1371546