Growth of antimony-based materials in a multiwafer planetary MOVPE-reactor

Author

Agert, C. ; Lanyi, P. ; Sulima, O.V. ; Stolz, W. ; Bett, A.W.

Author_Institution

Fraunhofer-Inst. fur Solare Energiesysteme, Freiburg, Germany

Volume

147

Issue

3

fYear

2000

fDate

6/1/2000 12:00:00 AM

Firstpage

188

Lastpage

192

Abstract

Four-junction photovoltaic solar cells are expected to reach conversion efficiencies around 40%. Mechanical stacking of two monolithic tandem cells is suggested. As a top cell the highly developed GaInP:GaAs tandem cell is considered. Device modelling is presented for the bottom cell. An infrared monolithic tandem solar cell is proposed which is a combination of an (AlGa)(AsSb) top cell (E_gap=1.03 eV) and a GaSb bottom cell based on GaSb as substrate material. The MOVPE growth of GaSb, GaAsSb and AlGaSb in a multiwafer planetary reactor that is suited to large-scale industrial production is reported. Influences of the substrate preparation, orientation of the growth surface, growth temperature and the V-III ratio on material quality are presented. Both hydrogen and nitrogen were employed as the carrier gas in different experiments. The best layers were obtained on (100) substrates oriented 2° toward (111)A, using hydrogen as carrier

Keywords

III-V semiconductors; MOCVD; gallium arsenide; gallium compounds; indium compounds; optical multilayers; semiconductor superlattices; solar cells; substrates; vapour phase epitaxial growth; (111)A; (AlGa)(AsSb) top cell; (GaIn)P:GaAs tandem cell; 1.03 eV; AlGaSb; GaAsSb; GaInP:GaAs; GaSb; GaSb bottom cell; MOVPE growth; antimony-based materials; conversion efficiencies; device modelling; four-junction photovoltaic solar cells; growth temperature; hydrogen; infrared monolithic tandem solar cell; large-scale industrial production; mechanical stacking; monolithic tandem cells; multiwafer planetary MOVPE-reactor; multiwafer planetary reactor; substrate material; substrate preparation;

fLanguage

English

Journal_Title

Optoelectronics, IEE Proceedings -

Publisher

iet

ISSN

1350-2433

Type

jour

DOI

10.1049/ip-opt:20000415

Filename

860914