Title :
Short channel effects in sub-0.1 μm thin film SOI-MOSFETs
Author :
Rauly, E. ; Balestra, F.
Author_Institution :
Lab. de Phys. des Composants a Semicond., ENSERG, Grenoble, France
fDate :
4/2/1998 12:00:00 AM
Abstract :
Short channel effects are thoroughly investigated in sub-0.1 μm N channel SOI-MOSFETs by using a two-dimensional numerical simulation. Drain-induced barrier lowering and charge sharing effects are calculated as a function of the main device parameters for gate lengths down to 0.05 μm. The impact of the silicon layer, the gate oxide and the buried oxide thicknesses, as well as of the Si film doping, are shown
Keywords :
MOSFET; buried layers; semiconductor device models; silicon-on-insulator; thin film transistors; 0.05 to 0.1 micron; 2D numerical simulation; Si; Si film doping; buried oxide thickness; charge sharing effects; drain-induced barrier lowering; gate oxide thickness; n-channel MOSFET; short channel effects; submicron device; thin film SOI-MOSFETs;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19980483
