• DocumentCode
    1371562
  • Title

    InGaAsSb photovoltaic cells with enhanced open-circuit voltage

  • Author

    Sulima, O.V. ; Beckert, R. ; Bett, A.W. ; Cox, J.A. ; Mauk, M.G.

  • Author_Institution
    Freiburg Mater. Res. Center, Germany
  • Volume
    147
  • Issue
    3
  • fYear
    2000
  • fDate
    6/1/2000 12:00:00 AM
  • Firstpage
    199
  • Lastpage
    204
  • Abstract
    Various Zn diffusion profiles in InGaAsSb photovoltaic cells with diffused emitters were experimentally studied. It was determined that strong built-in electric fields near the surface lead to a reduction of the saturation value of the injection (J01) component of the dark current, and hence to the increase of the open-circuit voltage (V oc). A value of J01 as low as 4.2×10-6 A/cm2 and a value of Voc, as high as 344 mV at 3 A/cm2 were measured
  • Keywords
    III-V semiconductors; dark conductivity; diffusion; gallium arsenide; gallium compounds; indium compounds; optical multilayers; photovoltaic cells; 344 mV; InGaAsSb; InGaAsSb photovoltaic cells; Zn; Zn diffusion profiles; dark current; diffused emitters; enhanced open-circuit voltage; injection (J01) component; open-circuit voltage; saturation value; strong built-in electric fields;
  • fLanguage
    English
  • Journal_Title
    Optoelectronics, IEE Proceedings -
  • Publisher
    iet
  • ISSN
    1350-2433
  • Type

    jour

  • DOI
    10.1049/ip-opt:20000500
  • Filename
    860917
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1371562