Title :
InGaAsSb photovoltaic cells with enhanced open-circuit voltage
Author :
Sulima, O.V. ; Beckert, R. ; Bett, A.W. ; Cox, J.A. ; Mauk, M.G.
Author_Institution :
Freiburg Mater. Res. Center, Germany
fDate :
6/1/2000 12:00:00 AM
Abstract :
Various Zn diffusion profiles in InGaAsSb photovoltaic cells with diffused emitters were experimentally studied. It was determined that strong built-in electric fields near the surface lead to a reduction of the saturation value of the injection (J01) component of the dark current, and hence to the increase of the open-circuit voltage (V oc). A value of J01 as low as 4.2×10-6 A/cm2 and a value of Voc, as high as 344 mV at 3 A/cm2 were measured
Keywords :
III-V semiconductors; dark conductivity; diffusion; gallium arsenide; gallium compounds; indium compounds; optical multilayers; photovoltaic cells; 344 mV; InGaAsSb; InGaAsSb photovoltaic cells; Zn; Zn diffusion profiles; dark current; diffused emitters; enhanced open-circuit voltage; injection (J01) component; open-circuit voltage; saturation value; strong built-in electric fields;
Journal_Title :
Optoelectronics, IEE Proceedings -
DOI :
10.1049/ip-opt:20000500
