Title :
Modelling of InAs thin layer growth from the liquid phase
Author :
Krier, A. ; Labadi, Z.
Author_Institution :
Dept. of Phys., Lancaster Univ., UK
fDate :
6/1/2000 12:00:00 AM
Abstract :
InAs quantum wells have been grown using the rapid slider liquid phase epitaxial growth technique. Analysis of the layer thickness data as a function of supercooling and contact time revealed the presence of two different growth mechanisms. A mathematical model of the epitaxial growth based around simple assumptions relating to melt rolling has been shown to give a good explanation of the experimental findings and also provides an integrated mathematical description of the growth phenomena
Keywords :
III-V semiconductors; indium compounds; liquid phase epitaxial growth; optical films; semiconductor device models; semiconductor quantum wells; supercooling; InAs; InAs quantum wells; InAs thin layer growth; contact time; epitaxial growth; growth mechanisms; growth phenomena; integrated mathematical description; layer thickness data; liquid phase; mathematical model; melt rolling; rapid slider liquid phase epitaxial growth technique; supercooling;
Journal_Title :
Optoelectronics, IEE Proceedings -
DOI :
10.1049/ip-opt:20000620
