DocumentCode :
1371935
Title :
LADISPICE-1.2: a nonplanar-drift lateral DMOS transistor model and its application to power IC TCAD
Author :
Chung, Y.
Author_Institution :
Samsung Electron. Co. Ltd., Kyunggi, South Korea
Volume :
147
Issue :
4
fYear :
2000
fDate :
8/1/2000 12:00:00 AM
Firstpage :
219
Lastpage :
227
Abstract :
A circuit simulation program (LADISPICE: LAteral Dmos transistor SPICE) has been developed for simulation and optimisation of power ICs which combine high-power lateral double-diffused MOS transistors with low-voltage logic and control elements on the same chip. This is a development of a previous static model and involves a charge-based dynamic model and a parasitic bipolar junction transistor model. These models have been incorporated into SPICE2G.6 source code and the paper demonstrates the excellent results. This new software represents an effective TCAD tool for the design and simulation of LDMOST power ICs
Keywords :
SPICE; circuit CAD; circuit optimisation; circuit simulation; equivalent circuits; power MOSFET; power integrated circuits; semiconductor device models; technology CAD (electronics); LADISPICE-1.2; LDMOST power ICs; SPICE2G.6 source code; charge-based dynamic model; circuit simulation program; control elements; double-diffused MOS transistors; high-power MOSTs; lateral DMOS transistor model; low-voltage logic; nonplanar-drift LDMOS transistor model; optimisation; parasitic BJT model; parasitic bipolar junction transistor; power IC TCAD application;
fLanguage :
English
Journal_Title :
Circuits, Devices and Systems, IEE Proceedings -
Publisher :
iet
ISSN :
1350-2409
Type :
jour
DOI :
10.1049/ip-cds:20000411
Filename :
861413
Link To Document :
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