Title :
Validity and applicability of triangular potential well approximation in modeling of MOS structure inversion and accumulation layer
Author :
Ma, Yutao ; Liu, Litian ; Yu, Zhiping ; Li, Zhijian
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing, China
fDate :
9/1/2000 12:00:00 AM
Abstract :
Two methods are presented to calculate the carrier distribution in MOS inversion and accumulation layer by self-consistent solution of Schrodinger and Poisson equations. One is the fully numerical solution of Schrodinger equation by finite difference method and the other is the analytical solution of Schrodinger equation under triangular potential well approximation. The effective electric field used in the analytical solution is properly determined. Results show that both carrier sheet density and surface potential in inversion layer and accumulation layer can be determined by analytical solution under triangular potential well approximation with sufficiently high accuracy. However, the carrier distribution profile and centroid of mobile charge layer, as well as the behavior at the flat-band region, have a large deviation from the numerical results
Keywords :
MIS structures; Poisson equation; Schrodinger equation; accumulation layers; carrier density; finite difference methods; inversion layers; surface potential; MOS structure; Poisson equation; Schrodinger equation; accumulation layer; analytical model; carrier distribution; carrier sheet density; effective electric field; finite difference method; inversion layer; numerical model; self-consistent solution; surface potential; triangular potential well approximation; Difference equations; Doping; Finite difference methods; MOSFET circuits; Poisson equations; Potential well; Quantization; Quantum mechanics; Schrodinger equation; Very large scale integration;
Journal_Title :
Electron Devices, IEEE Transactions on
