Title :
A new test structure for extracting extrinsic parameters in double-polysilicon bipolar transistors
Author :
Sandén, Martin ; Zhang, Shi-Li ; Grahn, Jan V. ; Östling, Mikael
Author_Institution :
Dept. of Electron., Kungl. Tekniska Hogskolan, Kista, Sweden
fDate :
9/1/2000 12:00:00 AM
Abstract :
A new test structure for parameter extraction is presented and implemented in a double-polysilicon bipolar junction transistor (BJT) process. The test structure is basically a real BJT, but without the intrinsic base. The test structure allows extraction of the base, collector and emitter impedances, and the extrinsic base-collector capacitance
Keywords :
bipolar transistors; elemental semiconductors; semiconductor device testing; silicon; Si; double polysilicon bipolar junction transistor; parameter extraction; test structure; Bipolar transistors; Capacitance; Circuit testing; Conductivity; Doping; Electrons; Hafnium; Impedance; Parameter extraction; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
