GaAs quantum wire lasers grown on v-grooved substrates isolated by self-aligned ion implantation

Author

Percival, C. ; Houston, P.A. ; Woodhead, J. ; Al-Khafaji, M. ; Hill, G. ; Roberts, J.S. ; Knights, A.P.

Author_Institution

Dept. of Electron. & Electr. Eng., Sheffield Univ., UK

Volume

47

Issue

9

fYear

2000

fDate

9/1/2000 12:00:00 AM

Firstpage

1769

Lastpage

1772

Abstract

Multiple vertically stacked GaAs/Al_xGa_1-xAs quantum wires laser diodes have been fabricated via MOVPE on v-grooved GaAs substrates. The devices are electrically isolated by oxygen ion implantation, utilizing the nonplanarity of the device. The process is self-aligning and requires no masking, yielding significant simplification in the device fabrication. Optimum implant conditions are determined. A quantum internal efficiency of 65.8% is measured for the optimum implanted devices, which exhibit a 5.5 mA threshold current

Keywords

III-V semiconductors; gallium arsenide; ion implantation; isolation technology; quantum well lasers; semiconductor quantum wires; vapour phase epitaxial growth; 5.5 mA; 65.8 percent; GaAs; GaAs-AlGaAs; GaAs/Al_xGa_1-xAs quantum wire laser diode; MOVPE growth; electrical isolation; nonplanar device fabrication; quantum internal efficiency; self-aligned ion implantation; threshold current; v-grooved substrate; Current measurement; Diode lasers; Epitaxial growth; Epitaxial layers; Gallium arsenide; Implants; Ion implantation; Optical device fabrication; Threshold current; Wire;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.861591

Filename

861591