Title :
On the accuracy and efficiency of substrate current calculations for sub-μm n-MOSFET´s
Author :
Jungemann, C. ; Yamaguchi, S. ; Goto, H.
Author_Institution :
Fujitsu Labs. Ltd., Kawasaki, Japan
Abstract :
The accuracy and efficiency of the self-consistent (regarding the electric field) Monte Carlo model, nonself-consistent Monte Carlo model, and the soft-threshold lucky electron model (LEM) for the calculation of substrate currents in deep sub-μm n-MOSFET´s are investigated. While the two Monte Carlo models are in good agreement with the experiment, the simpler LEM model still gives reasonable results even for a 0.16 μm n-MOSFET. On the other hand, huge differences in the CPU time consumption are found and the LEM is about four orders of magnitude faster than the self-consistent Monte Carlo simulations. The nonself-consistent calculations are only one order of magnitude slower than the LEM. The good agreement with the experiment is obtained without considering the so-called surface impact ionization or any fitting of parameters on the device level.
Keywords :
MOSFET; Monte Carlo methods; electric current; electronic engineering computing; hot carriers; semiconductor device models; 0.16 micron; CPU time consumption; FALCON program; Monte Carlo model; NMOSFET; electric field; nonself-consistent model; self-consistent model; soft-threshold lucky electron model; sub-/spl mu/m n-MOSFET; substrate current calculations; Convergence; Current measurement; Electrostatics; Hydrodynamics; Impurities; MOSFET circuits; Monte Carlo methods; Particle scattering; Phonons; Voltage;
Journal_Title :
Electron Device Letters, IEEE