A power IC technology with excellent cross-talk isolation

Author

Chan, W.W.T. ; Sin, K.O. ; Mok, P.K.T. ; Wong, S.S.

Author_Institution

Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Hong Kong

Volume

17

Issue

10

fYear

1996

Firstpage

467

Lastpage

469

Abstract

This paper reports a low-cost, excellent cross-talk isolation power integrated circuit (PIG) technology capable of integrating high-voltage LDMOS, high-voltage LIGBT, and low-voltage CMOS control circuit. The technology is implemented using a conventional twin-well CMOS process with no compromise on the CMOS devices, and the breakdown voltages of the LDMOS and LIGBT with drift length of 40 μm are over 400 V. Using this technology, operating current of the body diode of the LDMOS can be improved by over 16 times and operating current of the LIGBT can be improved by over five times before CMOS latch-up in the control circuit occurs.

Keywords

CMOS integrated circuits; crosstalk; electric breakdown; integrated circuit technology; isolation technology; power integrated circuits; 400 V; breakdown voltages; crosstalk isolation; high-voltage LDMOS; high-voltage LIGBT; lateral IGBT; low-voltage CMOS control circuit; power IC technology; twin-well CMOS process; Breakdown voltage; CMOS process; CMOS technology; Fabrication; Integrated circuit technology; Isolation technology; Isolators; Power integrated circuits; Process design; Silicon compounds;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.537077

Filename

537077