Title :
A power IC technology with excellent cross-talk isolation
Author :
Chan, W.W.T. ; Sin, K.O. ; Mok, P.K.T. ; Wong, S.S.
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Hong Kong
Abstract :
This paper reports a low-cost, excellent cross-talk isolation power integrated circuit (PIG) technology capable of integrating high-voltage LDMOS, high-voltage LIGBT, and low-voltage CMOS control circuit. The technology is implemented using a conventional twin-well CMOS process with no compromise on the CMOS devices, and the breakdown voltages of the LDMOS and LIGBT with drift length of 40 μm are over 400 V. Using this technology, operating current of the body diode of the LDMOS can be improved by over 16 times and operating current of the LIGBT can be improved by over five times before CMOS latch-up in the control circuit occurs.
Keywords :
CMOS integrated circuits; crosstalk; electric breakdown; integrated circuit technology; isolation technology; power integrated circuits; 400 V; breakdown voltages; crosstalk isolation; high-voltage LDMOS; high-voltage LIGBT; lateral IGBT; low-voltage CMOS control circuit; power IC technology; twin-well CMOS process; Breakdown voltage; CMOS process; CMOS technology; Fabrication; Integrated circuit technology; Isolation technology; Isolators; Power integrated circuits; Process design; Silicon compounds;
Journal_Title :
Electron Device Letters, IEEE
