DocumentCode :
1372484
Title :
Hydrogenated Amorphous Silicon Microstructuring for 0th-Order Polarization Elements at 1.0–1.1 
Wavelength
Author :
Kämpfe, Thomas ; Tonchev, Svetlen ; Gomard, Guillaume ; Seassal, Christian ; Parriaux, Olivier
Author_Institution :
Lab. Hubert Curien, Univ. de Lyon, St. Etienne, France
Volume :
3
Issue :
6
fYear :
2011
Firstpage :
1142
Lastpage :
1148
Abstract :
Dedicated photolithographic and reactive ion etching processes applied to the plasma-enhanced chemical vapor deposition (PECVD) hydrogenated amorphous silicon layers of solar cells have been developed in the objective of the low-cost manufacturing of efficient, depth-limited subwavelength gratings transforming a linearly polarized beam into a radially and azimuthally polarized beam in the 1.0-1.1-μm wavelength range.
Keywords :
elemental semiconductors; holmium compounds; holography; photolithography; silicon; solar cells; sputter etching; 0th-order polarization elements; depth imited subwavelength gratings; hydrogenated amorphous silicon microstructuring; photolithography; plasma enhanced chemical vapor deposition; reactive ion etching; solar cells; wavelength 1.0 mum to 1.1 mum; Etching; Fabrication; Gratings; Indexes; Laser beams; Resists; Substrates; Holography; image analysis;
fLanguage :
English
Journal_Title :
Photonics Journal, IEEE
Publisher :
ieee
ISSN :
1943-0655
Type :
jour
DOI :
10.1109/JPHOT.2011.2175444
Filename :
6074913
Link To Document :
