Title :
InP-based self-aligned normally-off superlattice-insulated-gate field-effect transistor
Author :
Chen, C.L. ; Mahoney, L.J. ; Brown, E.R.
Author_Institution :
Lincoln Lab., MIT, Lexington, MA, USA
Abstract :
An InP-based normally-off superlattice-insulated gate field-effect transistor (SIGFET) is developed using a self-aligned implant process. The new gate structure reduces the gate current significantly and yields a sharp pinch off. A SIGFET with 0.7 μm gate length delivers more than 800 mA/mm of drain current at 2 V of forward gate bias and yields an fT as high as 42 GHz. An explanation for a new kink effect is also proposed.
Keywords :
III-V semiconductors; indium compounds; insulated gate field effect transistors; microwave field effect transistors; millimetre wave field effect transistors; semiconductor superlattices; 0.7 micron; 2 V; 42 GHz; InP; SIGFET; field-effect transistor; gate current reduction; insulated-gate FET; kink effect; normally-off device; self-aligned implant process; superlattice IGFET; Etching; FETs; Implants; Indium compounds; Indium phosphide; Metallization; Microwave devices; Millimeter wave communication; Millimeter wave transistors; Optical amplifiers;
Journal_Title :
Electron Device Letters, IEEE
