DocumentCode
1372680
Title
Forward voltage drop and power loss in silicon rectifiers
Author
Luft, Werner
Author_Institution
International Rectifier Corporation, El Segundo, Calif.
Volume
79
Issue
3
fYear
1960
fDate
7/1/1960 12:00:00 AM
Firstpage
179
Lastpage
183
Abstract
The instantaneous forward voltage drop of silicon diodes of different sizes and processes is investigated over four magnitudes of current density. The temperature influence is determined. An equation relating the instantaneous forward voltage drop to current density and junction temperature is given. An expression of the average forward voltage drop and power loss as function of current density and conduction angle is developed.
Keywords
Current density; Equations; Junctions; Rectifiers; Silicon; Temperature; Temperature measurement;
fLanguage
English
Journal_Title
American Institute of Electrical Engineers, Part II: Applications and Industry, Transactions of the
Publisher
ieee
ISSN
0097-2185
Type
jour
DOI
10.1109/TAI.1960.6371663
Filename
6371663
Link To Document