InAs-InGaAs quantum dot VCSELs on GaAs substrates emitting at 1.3 μm

Author

Lott, J.A. ; Ledentsov, N.N. ; Ustinov, V.M. ; Maleev, N.A. ; Zhukov, A.E. ; Kovsh, A.R. ; Maximov, M.V. ; Volovik, B.V. ; Alferov, Zh.I. ; Bimberg, D.

Author_Institution

Dept. of Electr. & Comput. Eng., Air Force Inst. of Technol., Wright-Patterson AFB, OH, USA

Volume

36

Issue

16

fYear

2000

fDate

8/3/2000 12:00:00 AM

Firstpage

1384

Lastpage

1385

Abstract

Pulsed lasing at 1.3 μm via the exciton ground state is demonstrated for vertical cavity surface emitting lasers containing three uncoupled sheets of InAs quantum dot active layers. The structures are grown directly on GaAs substrates and when fabricated include selectively oxidised AlO current apertures, intracavity metal contacts, and AlO/GaAs distributed Bragg reflectors. Experimental devices operate pulsed at room temperature with threshold currents below 2 mA and differential slope efficiencies above 40%

Keywords

III-V semiconductors; distributed Bragg reflector lasers; excitons; gallium arsenide; ground states; indium compounds; laser beams; laser cavity resonators; molecular beam epitaxial growth; optical fabrication; quantum well lasers; semiconductor quantum dots; surface emitting lasers; 1.3 mum; 2 mA; 298 K; 40 percent; AlO; AlO-GaAs; AlO/GaAs distributed Bragg reflectors; GaAs; GaAs substrates; InAs quantum dot active layers; InAs-InGaAs; InAs-InGaAs quantum dot VCSELs; VCSELs; differential slope efficiencies; exciton ground state; fabrication; intracavity metal contacts; pulsed lasing; quantum dot VCSELs; room temperature; selectively oxidised AlO current apertures; threshold currents; uncoupled sheets; vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20000988

Filename

862159