Title :
Room temperature continuous wave InGaAsN quantum well vertical-cavity lasers emitting at 1.3 μm
Author :
Choquette, K.D. ; Klem, J.F. ; Fischer, A.J. ; Blum, O. ; Allerman, A.A. ; Fritz, I.J. ; Kurtz, S.R. ; Breiland, W.G. ; Sieg, R. ; Geib, K.M. ; Scott, J.W. ; Naone, R.L.
Author_Institution :
Center for Compound Semicond. Sci. & Technol., Sandia Nat. Labs., Albuquerque, NM, USA
fDate :
8/3/2000 12:00:00 AM
Abstract :
Selectively oxidised vertical-cavity lasers emitting at 1294 nm using InGaAsN/GaAs quantum wells which exhibit continuous wave operation at and above room temperature are reported for the first time. The lasers employ two n-type Al0.94Ga0.06As/GaAs distributed Bragg reflectors each with a selectively oxidised current aperture adjacent to the optical cavity, and the top output mirror contains a tunnel junction to inject holes into the active region. Continuous wave single mode lasing is observed up to 55°C. These lasers exhibit the longest wavelength reported to date for vertical-cavity surface lasers grown on GaAs substrates
Keywords :
III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; gallium compounds; indium compounds; laser beams; laser cavity resonators; laser mirrors; laser modes; quantum well lasers; surface emitting lasers; 1.3 mum; 1294 nm; 298 K; 55 C; Al0.94Ga0.06As-GaAs; Al0.94Ga0.06As/GaAs; GaAs substrates; InGaAsN; InGaAsN quantum well vertical-cavity lasers; InGaAsN-GaAs; InGaAsN/GaAs quantum wells; active region; continuous wave operation; continuous wave single mode lasing; distributed Bragg reflectors; optical cavity; room temperature; room temperature continuous wave lasers; selectively oxidised current aperture; selectively oxidised vertical-cavity lasers; top output mirror; tunnel junction; vertical-cavity surface lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20000928
