Title :
Evaluation of ELDRS Mechanisms Using Dose Rate Switching Experiments on Gated Lateral PNP Transistors
Author :
Gonzalez-Velo, Yago ; Boch, Jérôme ; Saigné, Frédéric ; Roche, Nicolas J -H ; Pérez, Stephanie ; Vaillé, Jean-Roch ; Deneau, Christelle ; Dusseau, Laurent ; Lorfèvre, Eric ; Schrimpf, Ronald D. ; Chatry, Christian ; Legoulven, Enoal ; Platteter, Dale G.
Author_Institution :
Univ. Montpellier 2, Montpellier, France
Abstract :
The switched dose rate technique has been proposed as an accelerated test technique for enhanced low-dose-rate sensitivity. The physical mechanisms at play when this technique is applied are investigated in this paper. The variation of Not and Nit is characterized using gated lateral pnp transistors to understand the kinetics of device degradation related to differences in mechanisms between high dose rate and low dose rate irradiations.
Keywords :
bipolar transistors; interface states; life testing; p-n heterojunctions; ELDRS mechanisms; accelerated test technique; dose rate switching experiments; enhanced low-dose-rate sensitivity; gated lateral PNP transistors; Bipolar transistors; Degradation; Logic gates; Radiation effects; Sensitivity analysis; Switching circuits; Bipolar devices; ELDRS; interface trapped charge; oxide trapped charge; total dose;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2011.2170707
