Title :
CMOS class-E power amplifier (1.8-GHz) with an additional thin-film technology
Author :
Park, C. ; Seo, Changho
Author_Institution :
Sch. of Electron. Eng., Soongsil Univ., Seoul, South Korea
fDate :
11/1/2010 12:00:00 AM
Abstract :
A 1.8-GHz power amplifier is implemented using the 0.18-μm Radio Frequency (RF) Complementary Metal Oxide Semiconductor (CMOS) process. An additional thin-film technology on a separate substrate is used to design the output matching network for high efficiency. To minimise the number of bond-wires, a single differential power stage is used. The output matching network was completed with the proposed load impedance transformer and an Metal Insulator Metal (MIM) capacitor using additional thin-film technology. The amplifier achieved a drain efficiency of 50.5 μ at a maximum output power of 31.6 μdBm at 1.81 μGHz.
Keywords :
CMOS analogue integrated circuits; UHF integrated circuits; UHF power amplifiers; thin film circuits; CMOS class-E power amplifier; MIM capacitor; RF CMOS process; bond wires; frequency 1.8 GHz; load impedance transformer; output matching network; size 0.18 mum; substrate; thin-film technology;
Journal_Title :
Circuits, Devices & Systems, IET
DOI :
10.1049/iet-cds.2010.0014
