A new method for active device load equivalent circuit extraction for MMICs

Author

Giannini, Franco ; Leuzzi, Giorgio ; Serino, Antonio

Author_Institution

Dept. of Electron. Eng., Rome Univ., Italy

Volume

10

Issue

8

fYear

2000

fDate

8/1/2000 12:00:00 AM

Firstpage

319

Lastpage

321

Abstract

Active device loads for monolithic microwave integrated circuits (MMICs) have been extensively studied and a new procedure for the extraction of their equivalent circuit has been developed. The procedure requires the availability of a coplanar three-terminal device for accurate model extraction. The new procedure is accurate, general, and easy to apply. Its validity has been demonstrated by extracting a scalable bias-dependent small-signal equivalent circuit of PHEMT-based active device loads up to 40 GHz. A good agreement between measured and modeled data has been obtained, confirming the validity and the accuracy of the proposed method

Keywords

HEMT integrated circuits; circuit simulation; equivalent circuits; field effect MMIC; integrated circuit modelling; MMICs; PHEMT-based active device; accuracy; active device load; coplanar three-terminal device; equivalent circuit extraction; scalable bias-dependent small-signal equivalent circuit; validity; Circuit simulation; Data mining; Equivalent circuits; FETs; Integrated circuit modeling; Load modeling; MMICs; Microwave devices; Microwave integrated circuits; Monolithic integrated circuits;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.862227

Filename

862227