New non-quasi-static theory for extracting small-signal parameters applied to LDMOSFETs

Author

Roblin, Patrick ; Akhtar, Siraj ; Strahler, Jeffrey

Author_Institution

Dept. of Electr. Eng., Ohio State Univ., Columbus, OH, USA

Volume

10

Issue

8

fYear

2000

fDate

8/1/2000 12:00:00 AM

Firstpage

322

Lastpage

324

Abstract

We present analytic formulas for simultaneously extracting the parasitic resistances, inductances, and the intrinsic parameters of a small-signal FET equivalent circuit model including the non-quasi-static (NQS) charging time-constants associated with the gate and drain charges, respectively. For the NQS equivalent circuit topology considered, there exists a continuum of solutions for the circuit parameters, as a function of the source resistance, giving exactly the same frequency response fit. A multi-bias analysis is used to determine the final source resistance. Realistic results are obtained for power LDMOSFETs despite the very small value of the parasitics in these power RF devices

Keywords

equivalent circuits; power MOSFET; semiconductor device models; LDMOSFET; equivalent circuit; frequency response; multi-bias analysis; nonquasi-static charging time constant; parameter extraction; parasitic inductance; parasitic resistance; power RF device; small-signal model; Circuit topology; Equivalent circuits; FETs; Frequency response; Microwave devices; Microwave transistors; Parameter extraction; Power amplifiers; Radio frequency; Silicon;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.862228

Filename

862228