DocumentCode
1373298
Title
A low phase noise X-band MMIC GaAs MESFET VCO
Author
Lee, C.-H. ; Han, S. ; Matinpour, B. ; Laskar, J.
Author_Institution
Sch. of Electr. Eng. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Volume
10
Issue
8
fYear
2000
fDate
8/1/2000 12:00:00 AM
Firstpage
325
Lastpage
327
Abstract
We present a fully monolithic X-band VCO MMIC implemented in a commercial GaAs MESFET process. Measurement results demonstrate a single sideband phase noise of -91 dBc/Hz at a 100 KHz offset. This VCO achieves a maximum output power of 11.5 dBm with 12 dB of output power control and a 550 MHz of frequency tuning range. Second harmonic suppression of 20 dB or more is measured across the entire power and frequency range. These results are comparable to, or better than, the best reported results of VCO´s implemented in high electron mobility transistor (HEMT) and heterojunction bipolar transistor (HBT) processes
Keywords
III-V semiconductors; MESFET integrated circuits; MMIC oscillators; gallium arsenide; integrated circuit noise; phase noise; voltage-controlled oscillators; GaAs; X-band MMIC GaAs MESFET VCO; phase noise; Frequency; Gallium arsenide; HEMTs; Heterojunction bipolar transistors; MESFETs; MMICs; Noise measurement; Phase noise; Power generation; Voltage-controlled oscillators;
fLanguage
English
Journal_Title
Microwave and Guided Wave Letters, IEEE
Publisher
ieee
ISSN
1051-8207
Type
jour
DOI
10.1109/75.862229
Filename
862229
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