Title :
The Susceptibility of 45 and 32 nm Bulk CMOS Latches to Low-Energy Protons
Author :
Seifert, Norbert ; Gill, Balkaran ; Pellish, Jonathan A. ; Marshall, Paul W. ; LaBel, Kenneth A.
Author_Institution :
Intel Corp., Hillsboro, OR, USA
Abstract :
We measured low-energy proton radiation induced soft error rates (SER) of standard and reduced-SER (RSER) latches, manufactured in 32 nm and 45 nm bulk CMOS technologies, and conclude that sequential logic elements built in these technologies are not yet susceptible. Further, our results demonstrate that at proton energies where direct ionization dominates, critical charge (Qcrit) plays a far bigger role than at proton energies above the nuclear reaction threshold.
Keywords :
CMOS integrated circuits; error statistics; ionisation; proton effects; bulk CMOS latch susceptibility; bulk CMOS technologies; critical charge; direct ionization; low-energy proton radiation induced soft error rates; nuclear reaction threshold; reduced-SER latches; sequential logic elements; size 32 nm; size 45 nm; Aluminum; Latches; Particle beams; Protons; Silicon on insulator technology; Voltage measurement; Logic; SER; protons; radiation; single event; soft error;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2011.2171004
