Title :
Cavity length dependence of optical characteristics in high power narrow stripe GaAs superluminescent diodes
Author_Institution :
Omron Corp., Kyoto, Japan
Abstract :
A high-power planar structure GaAs superluminescent diode (SLD) with a 5- mu m-wide partially current injected region with a 30-200- mu m cavity length has been developed by using a simple wafer process of spin-on-glass Zn selective diffusion. Drastic changes in optical characteristics from the light emitting diode mode to the SLD mode have been observed with increasing cavity length, reflecting the gain of the SLD mode. Experimental results of the far-field patterns, the maximum power output, and the optical spectrum show that the best suited cavity length should be designed carefully depending on the object of practical use.<>
Keywords :
III-V semiconductors; gallium arsenide; integrated optics; luminescent devices; optical resonators; optical workshop techniques; semiconductor growth; superradiance; surface diffusion; 30 to 200 micron; 5 micron; SLD mode; Zn; cavity length; far-field patterns; high power narrow stripe GaAs superluminescent diodes; light emitting diode mode; maximum power output; optical spectrum; partially current injected region; planar structure; simple wafer process; spin-on-glass Zn selective diffusion; Gallium arsenide; Light emitting diodes; Optical feedback; Optical fiber communication; Optical fiber devices; Optical noise; Optical sensors; Stimulated emission; Superluminescent diodes; Zinc;
Journal_Title :
Photonics Technology Letters, IEEE
