Cavity length dependence of optical characteristics in high power narrow stripe GaAs superluminescent diodes

Author

Imanaka, K.

Author_Institution

Omron Corp., Kyoto, Japan

Volume

2

Issue

10

fYear

1990

Firstpage

705

Lastpage

707

Abstract

A high-power planar structure GaAs superluminescent diode (SLD) with a 5- mu m-wide partially current injected region with a 30-200- mu m cavity length has been developed by using a simple wafer process of spin-on-glass Zn selective diffusion. Drastic changes in optical characteristics from the light emitting diode mode to the SLD mode have been observed with increasing cavity length, reflecting the gain of the SLD mode. Experimental results of the far-field patterns, the maximum power output, and the optical spectrum show that the best suited cavity length should be designed carefully depending on the object of practical use.<>

Keywords

III-V semiconductors; gallium arsenide; integrated optics; luminescent devices; optical resonators; optical workshop techniques; semiconductor growth; superradiance; surface diffusion; 30 to 200 micron; 5 micron; SLD mode; Zn; cavity length; far-field patterns; high power narrow stripe GaAs superluminescent diodes; light emitting diode mode; maximum power output; optical spectrum; partially current injected region; planar structure; simple wafer process; spin-on-glass Zn selective diffusion; Gallium arsenide; Light emitting diodes; Optical feedback; Optical fiber communication; Optical fiber devices; Optical noise; Optical sensors; Stimulated emission; Superluminescent diodes; Zinc;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.60766

Filename

60766