Title :
Short pulse gain saturation in InGaAsP diode laser amplifiers
Author :
Lai, Y. ; Hall, K.L. ; Ippen, E.P. ; Eisenstein, G.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., MIT, Cambridge, MA, USA
Abstract :
The saturation behavior of InGaAsP optical amplifiers is studied for input pulsewidths of 15 ps and 150 fs. The measured output saturation energies are 150 and 40 fJ, respectively. A simple rate equation model based on pump-probe results predicts the observed pulsewidth-dependent saturation behavior.<>
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; optical saturation; semiconductor junction lasers; 15 ps; 150 fJ; 150 ps; 40 fJ; InGaAsP diode laser; gain saturation; input pulsewidths; laser amplifiers; optical amplifiers; output saturation energies; pulsewidth-dependent saturation behavior; pump-probe results; rate equation model; Diode lasers; Energy measurement; Equations; Optical amplifiers; Optical pulses; Optical pumping; Optical saturation; Pulse amplifiers; Semiconductor optical amplifiers; Stimulated emission;
Journal_Title :
Photonics Technology Letters, IEEE
