Title :
A new technique for fabrication of OEICs-the etched back planar process-and its application to the fabrication of planar embedded InP-InGaAs p-i-n photodiodes
Author :
Shimizu, J. ; Inomoto, Y. ; Kida, N. ; Terakado, T. ; Suzuki, A.
Author_Institution :
NEC Corp., Kawasaki, Japan
Abstract :
The etched back planar process utilizes a nonselective reactive ion beam etching (RIBE) technique both for semiconductor layers and for photoresist. Application of the technique to the fabrication of a planar InP-InGaAs embedded p-i-n photodiode is discussed. The groove depth on the wafer was reduced from 5.3 mu to 0.6 mu m, and the wafer was nearly planarized. Estimates based on photoluminescence intensity variation and the characteristics of the fabricated p-i-n photodiode indicate that little damage was incurred during the process. These results indicate that fabrication of planar OEICs by means of this process is feasible.<>
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; optical workshop techniques; p-i-n diodes; photodiodes; sputter etching; 5.3 to 0.6 micron; InP-InGaAs; OEICs; etched back planar process; groove depth; nonselective reactive ion beam etching; optoelectronic integrated circuits; p-i-n photodiodes; photoluminescence intensity variation; photoresist; planar InP-InGaAs embedded p-i-n photodiode; semiconductor layers; Epitaxial layers; Etching; Indium gallium arsenide; Indium phosphide; Integrated circuit technology; Ion beams; Optical device fabrication; Optoelectronic devices; Resists; Substrates;
Journal_Title :
Photonics Technology Letters, IEEE
