Title :
High linearity 23-33 GHz SOI CMOS downconversion double balanced mixer
Author :
Wu, Chung-Lin ; Yun, Yeo Hun ; Yu, Chu ; O, K.K.
Author_Institution :
Dept. of Electr. Eng. & Texas Analog Center of Excellence, Univ. of Texas at Dallas, Richardson, TX, USA
Abstract :
A highly linear downconversion mixer is demonstrated in a digital 45 nm silicon on insulator (SOI) CMOS process. The mixer downconverts the radio frequency signal from 23 33 GHz to 12 GHz intermediate frequency. By using a multiple gated transistor (MGTR) technique and suppressing the large signals at twice of the LO frequency at the drain nodes of transconductors, the mixer achieves an input referred third-order intercept point (IIP3) of 17 dBm, a conversion power gain of 0.5 dB, and a single side band noise figure of 12.1 dB at the radio frequency of 28 GHz. This is the first CMOS MGTR Gilbert mixer operating near millimetre-wave frequencies and fabricated using SOI MOS transistors with a floating body.
Keywords :
CMOS analogue integrated circuits; field effect MMIC; microwave field effect transistors; microwave mixers; silicon-on-insulator; CMOS MGTR Gilbert mixer; LO frequency; SOI MOS transistors; floating body; frequency 12 GHz; frequency 23 GHz to 33 GHz; gain 0.5 dB; high-linearity SOI CMOS downconversion double-balanced mixer; millimetre-wave frequencies; multiple-gated transistor technique; noise figure 12.1 dB; radiofrequency signal; silicon on insulator; size 45 nm; third-order intercept point; transconductor drain node;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2011.2998