A patterned and passivated organic-inorganic semiconductor heterojunction diode

A new process for photolithographically patterning and passivating organic-inorganic semiconductor heterojunction devices is described. It makes it possible to overcome two important barriers to the use of organic semiconductors in active optoelectronic integrated circuit applications. The organic semiconductor used was 2,4,9,10-peryelenetetracarboxylic dianhydride (PTCDA), which was vacuum deposited onto the surface of a p-Si substrate. Passivation was achieved via the deposition of SiO/sub 2/ onto the organic thin film using a low-temperature process. It was found that the organic-inorganic heterointerfaces is not damaged in the fabrication process, which uses several wet chemical etchants. In addition, all processes employed are compatible with both Si, III-V, and II-VI semiconductor device fabrication technologies. Preliminary reliability tests made at elevated temperatures indicate that the organic-inorganic heterojunction, after passivation is stable over extended periods of time.<>