Analytic description of short-channel effects in fully-depleted double-gate and cylindrical, surrounding-gate MOSFETs

Author

Oh, Sang-Hyun ; Monroe, Don ; Hergenrother, J.M.

Author_Institution

Lucent Technol. Bell Labs., Murray Hill, NJ, USA

Volume

21

Issue

9

fYear

2000

Firstpage

445

Lastpage

447

Abstract

Short-channel effects in fully-depleted double-gate (DG) and cylindrical, surrounding-gate (Cyl) MOSFETs are governed by the electrostatic potential as confined by the gates, and thus by the device dimensions. The simple but powerful evanescent-mode analysis shows that the length /spl lambda/, over which the source and drain perturb the channel potential, is 1//spl pi/ of the effective device thickness in the double-gate case, and 1/4.810 of the effective diameter in the cylindrical case, in excellent agreement with PADRE device simulations. Thus for equivalent silicon and gate oxide thicknesses, evanescent-mode analysis indicates that Cyl-MOSFETs can be scaled to 35% shorter channel lengths than DG-MOSFETs.

Keywords

Electric potential; MOSFET; Semiconductor device models; MOSFET scaling; PADRE device simulations; Si thickness; channel potential; cylindrical surrounding-gate MOSFETs; device dimensions; effective device thickness; electrostatic potential; evanescent-mode analysis; fully-depleted double-gate MOSFETs; gate oxide thickness; parabolic approximation; short-channel effects; transverse confinement; Analytical models; Degradation; Doping; Electrostatic analysis; Geometry; Laplace equations; MOSFETs; Poisson equations; Silicon; Subthreshold current;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.863106

Filename

863106