High-speed bulk InGaAsP-InP electroabsorption modulators with bandwidth in excess of 20 GHz

Author

Mak, Gary ; Rolland, Claude ; Fox, K.E. ; Blaauw, C.

Author_Institution

Bell-Northern Res. Ltd., Ottawa, Ont., Canada

Volume

2

Issue

10

fYear

1990

Firstpage

730

Lastpage

733

Abstract

Bulk InGaAsP-InP electroabsorption optical modulators with high extinction ratio, low drive voltage, and high modulation bandwidth at lambda =1.3 mu m are reported. The devices have a tapered-fiber-to-modulator-to-tapered-fiber extinction ratio greater than 20 dB at a drive voltage of <5 V. Very low capacitance modulators (<0.2 pF) were fabricated using SiO/sub 2/ bonding pad isolation, resulting in a measured electrical modulation bandwidth in excess of 20 GHz.<>

Keywords

III-V semiconductors; electro-optical devices; gallium arsenide; gallium compounds; indium compounds; integrated optics; optical modulation; 1.3 micron; III-V semiconductors; SiO/sub 2/ bonding pad isolation; drive voltage; electrical modulation bandwidth; high speed bulk InGaAsP-InP electroabsorption modulators; tapered-fiber-to-modulator-to-tapered-fiber extinction ratio; very low capacitance modulators; Bandwidth; Capacitance; Chirp modulation; Extinction ratio; High speed optical techniques; Indium phosphide; Optical fiber devices; Optical modulation; Optical sensors; Voltage;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.60774

Filename

60774