DocumentCode :
1373845
Title :
Inversion MOS capacitance extraction for high-leakage dielectrics using a transmission line equivalent circuit
Author :
Barlage, Douglas W. ; Keeffe, James T´O ; Kavalieros, Jack T. ; Nguyen, Michael M. ; Chau, Robert S.
Author_Institution :
Component Res., Intel Corp., Hillsboro, OR, USA
Volume :
21
Issue :
9
fYear :
2000
Firstpage :
454
Lastpage :
456
Abstract :
Accurate measurement of MOS transistor inversion capacitance with a physical silicon dioxide thickness less than 20 /spl Aring/ requires correction for the direct tunneling leakage. This work presents a capacitance model and extraction based on the application of a lossy transmission line model to the MOS transistor. This approach properly accounts for the leakage current distribution along the channel and produces a gate length dependent correction factor for the measured capacitance that overcomes discrepancies produced through use of previously reported discrete element based models. An extraction technique is presented to determine the oxide´s tunneling and channel resistance of the transmission line equivalent circuit. This model is confirmed by producing consistent C/sub 0x/ measurements for several different gate lengths with physical silicon dioxide thickness of 9, 12, and 18 /spl Aring/.
Keywords :
Capacitance measurement; Current distribution; Equivalent circuits; Leakage currents; MOSFET; Semiconductor device measurement; Semiconductor device models; Transmission line theory; Tunneling; 1 to 10 mum; 9 to 18 angstrom; MOS transistor inversion capacitance; Si-SiO/sub 2/; SiO/sub 2/ thickness; capacitance model; channel resistance; direct tunneling leakage; extraction technique; gate length; gate length dependent correction factor; high-leakage dielectrics; inversion MOS capacitance extraction; leakage current distribution; lossy transmission line model; oxide tunneling; transmission line equivalent circuit; Capacitance measurement; Dielectric measurements; Electrical resistance measurement; Length measurement; MOSFETs; Propagation losses; Silicon compounds; Thickness measurement; Transmission line measurements; Tunneling;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/55.863109
Filename :
863109
Link To Document :
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