A highly dispersive wavelength division demultiplexer in InGaAlAs-InP for 1.5 mu m operation

Author

Croston, I.R. ; Young, T.P. ; Morasca, S.

Author_Institution

GEC-Marconi Res. Centre, Chelmsford, UK

Volume

2

Issue

10

fYear

1990

Firstpage

734

Lastpage

737

Abstract

A novel integrated optical wavelength division demultiplexer in InGaAlAs-InP is described. It uses interference between the fundamental (zeroth) and second-order modes in a symmetric waveguide structure. Experimental results show that this device is twice as dispersive as two-mode interference (TMI) devices based on interference between the fundamental and antisymmetric modes. Channel spacings between 15 mu m and 40 nm were obtained with channel isolation in excess of +or-10 dB.<>

Keywords

III-V semiconductors; aluminium compounds; frequency division multiplexing; gallium arsenide; indium compounds; integrated optics; optical communication equipment; 1.5 micron; III-V semiconductors; InGaAlAs-InP; channel isolation; channel spacings; fundamental modes; highly dispersive wavelength division demultiplexer; integrated optical wavelength division demultiplexer; second-order modes; symmetric waveguide structure; Channel spacing; Dispersion; Dry etching; Indium compounds; Indium gallium arsenide; Indium phosphide; Interference; Molecular beam epitaxial growth; Optical waveguides; Plasma applications;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.60775

Filename

60775