An anomalous crossover in Vth roll-off for indium-doped nMOSFETs

Author

Sun-Jay Chang ; Chun-Yen Chang ; Coming Chen ; Jih-Wen Chou ; Tien-Sheng Chao ; Tiao-Yuan Huang

Author_Institution

Inst. of Electron., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

21

Issue

9

fYear

2000

Firstpage

457

Lastpage

459

Abstract

The effects of indium channel implant energy on short-channel effect (SCE) and narrow channel effect (NCE) were studied on NMOS devices down to 0.1 μm channel length. An anomalous crossover in Vth roll-off curves was observed, for the first time, on indium-implanted splits with different implant energies. This intriguing finding, together with the observed reduction in reverse narrow channel effect (RNCE) and effective channel length with reducing indium implant energy, can be consistently explained by the suppression of transient enhanced diffusion (TED) of channel impurity due to indium deactivation.

Keywords

Diffusion; Doping profiles; Indium; Ion implantation; MOSFET; Secondary ion mass spectra; Semiconductor device measurement; 0.1 mum; In channel implant energy; In deactivation; In-implanted splits; NMOS devices; SIMS profiles; Si:In nMOSFETs; Si:In-SiO/sub 2/; Vth roll-off; anomalous crossover; channel length; implant energies; narrow channel effect; reverse narrow channel effect; short-channel effect; super-steep-retrograde channel; threshold voltage; transient enhanced diffusion suppression; Capacitance; Chaos; Doping; Implants; Impurities; Indium; Laboratories; MOS devices; MOSFETs; Rapid thermal processing;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.863110

Filename

863110