Title :
A 3.2-GHz 1.3-mW ILO phase rotator for burst-mode mobile memory I/O in 28-nm low-leakage CMOS
Author_Institution :
Rambus Inc., Sunnyvale, CA, USA
Abstract :
This paper presents a 7-bit 3.2-GHz injection-locked oscillator (ILO) based phase rotator for burst-mode mobile memory I/O. Phase shifting is achieved by selecting the injection point and offsetting the natural frequency of the ILO from that of the injected clock. The circuit implements two techniques that enable its use in burst-mode systems: 1) synchronous stopping and restarting of the ILO achieved by strong injection, as opposed to a relatively weak injection during normal operation, and 2) phase characteristic calibration that allows continuous, infinite-throw phase rotation needed for link timing calibration. The circuit is implemented in a 1-V low-leakage 28-nm CMOS process. Power consumption and area are 1.3 mW and 0.03 mm2.
Keywords :
CMOS memory circuits; MMIC oscillators; MMIC phase shifters; field effect MMIC; injection locked oscillators; ILO phase rotator; burst-mode mobile memory I/O; continuous infinite-throw phase rotation; frequency 3.2 GHz; injected clock; injection point selection; injection-locked oscillator; link timing calibration; low-leakage CMOS; low-leakage CMOS process; natural frequency; phase characteristic calibration; phase shifters; phase shifting; power 1.3 mW; synchronous stopping; voltage 1 V; word length 7 bit; CMOS integrated circuits; Calibration; Clocks; Mobile communication; Phase locked loops; Regulators; Tuning; injection-locked oscillators; phase shifters;
Conference_Titel :
European Solid State Circuits Conference (ESSCIRC), ESSCIRC 2014 - 40th
Conference_Location :
Venice Lido
Print_ISBN :
978-1-4799-5694-4
DOI :
10.1109/ESSCIRC.2014.6942119