Title :
A 29.5 dBm class-E outphasing RF power amplifier with performance enhancement circuits in 45nm CMOS
Author :
Banerjee, Adrish ; Hezar, Rahmi ; Lei Ding ; Schemm, Nathan ; Haroun, Baher
Author_Institution :
Kilby Labs., Texas Instrum., Dallas, TX, USA
Abstract :
A high efficiency class-E outphasing RF power amplifier is presented using a new passive combining circuit. A Power Enhancement Circuit (PEC) and an Efficiency Enhancement Circuit (EEC) are also proposed as part of the combiner that increase output power without violating reliability limits and improve efficiency at power back-off, respectively. The proposed power amplifier is designed in 45nm CMOS technology. Simulation results and measurement data are presented to demonstrate the performance of the proposed PA. The PA delivers 29.5 dBm peak output power at 2.4GHz with 46.76% drain efficiency at peak output power, 32.96% drain efficiency at 3 dB power back-off and 21.16% drain efficiency at 6 dB power back-off. Better than -50 dBc ACPR is obtained with 64-QAM LTE signal with 10MHz and 20MHz bandwidth. 21% average efficiency is obtained with LTE signal with 6 dB peak-to-average power ratio (PAPR).
Keywords :
CMOS analogue integrated circuits; Long Term Evolution; UHF integrated circuits; UHF power amplifiers; passive networks; quadrature amplitude modulation; 64-QAM LTE signal; CMOS technology; EEC; PA; PAPR; PEC; bandwidth 10 MHz; bandwidth 20 MHz; class-E outphasing RF power amplifier; efficiency 21 percent; efficiency 21.16 percent; efficiency 32.96 percent; efficiency 46.76 percent; efficiency enhancement circuit; frequency 2.4 GHz; passive combining circuit; peak-to-average power ratio; performance enhancement circuits; power back-off; size 45 nm; CMOS integrated circuits; Capacitors; MOSFET; Peak to average power ratio; Power generation; Power measurement; Radio frequency; RF; class-E; outphasing; power amplifier;
Conference_Titel :
European Solid State Circuits Conference (ESSCIRC), ESSCIRC 2014 - 40th
Conference_Location :
Venice Lido
Print_ISBN :
978-1-4799-5694-4
DOI :
10.1109/ESSCIRC.2014.6942123
