Title :
A high-performance optical receiver for 622 Mb/s direct-detection systems
Author :
Tzeng, L.D. ; Frahm, R.E. ; Asous, W.
Author_Institution :
AT&T Bell Labs., Breinigsville, PA, USA
Abstract :
A report is presented on the measurement of receiver sensitivity and noise characteristics of a high-performance optical receiver using a low-noise InGaAs avalanche photodiode (APD) and a low-noise high-electron mobility transistor (HEMT). At a bit rate of 622.08 Mb/s and a wavelength of 1.297 mu m, the measured receiver sensitivity is -48.3 dBm. This is equivalent to a sensitivity of 155 photons/b and is about 12 dB away from the quantum limit of 10 photons/b.<>
Keywords :
III-V semiconductors; avalanche photodiodes; electron device noise; gallium arsenide; high electron mobility transistors; indium compounds; integrated optoelectronics; optical communication equipment; 1.297 micron; 622.08 Mbit/s; HEMT; III-V semiconductor; direct-detection systems; high-performance optical receiver; low noise InGaAs avalanche photodiode; low-noise high-electron mobility transistor; noise characteristics; quantum limit; receiver sensitivity; wavelength; Bit rate; HEMTs; Noise measurement; Optical amplifiers; Optical noise; Optical receivers; PIN photodiodes; Preamplifiers; Resistors; Wavelength measurement;
Journal_Title :
Photonics Technology Letters, IEEE
