Cubic Pyrochlore Bismuth Zinc Niobate Thin Films for Antifuse Applications

Author

Wang, Gang ; Li, Wei ; Li, Ping ; Xie, Xiaodong ; Zhang, Guojun ; Jiang, Jing

Author_Institution

State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China

Volume

33

Issue

1

fYear

2012

Firstpage

92

Lastpage

94

Abstract

Characteristics of a novel antifuse structure with cubic pyrochlore bismuth zinc niobate (BZN) thin film are investigated. A structure of Ti/Pt/BZN/Al for the BZN antifuses was proposed. The influence of various electric field directions, which were used for rupturing and programming the antifuses, on the BZN antifuse was analyzed, and the electric field direction of up to down was opted to program the antifuses. Excellent properties of the BZN antifuses were illustrated, including low leakage current, high off-state resistance, low programming voltage and time, moderate programming current, low on -state resistance, and tight distribution of on-state resistance. The BZN antifuse will be the most promising alternative to the gate oxide antifuses.

Keywords

aluminium; bismuth compounds; electric resistance; high-k dielectric thin films; leakage currents; platinum; pyroelectric devices; titanium; zinc compounds; BZN antifuses; Ti-Pt-BZN-Al structure; Ti-Pt-BiZnNbO₃-Al; antifuse applications; antifuse structure; cubic pyrochlore bismuth zinc niobate thin films; electric field directions; gate oxide antifuses; leakage current; off-state resistance; on-state resistance distribution; programming current; programming time; programming voltage; Bismuth; Dielectrics; Electrodes; Logic gates; Programming; Resistance; Zinc; Antifuse; bismuth zinc niobate (BZN); thin film;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2011.2171474

Filename

6078394