DocumentCode :
1374257
Title :
A computer simulation model for simulating distortion in FET resistors
Author :
Scheinberg, Norman ; Pinkhasov, Aleksey
Author_Institution :
Anadigics Inc., Warren, NJ, USA
Volume :
19
Issue :
9
fYear :
2000
fDate :
9/1/2000 12:00:00 AM
Firstpage :
981
Lastpage :
989
Abstract :
The power law that governs harmonic distortion states that the second harmonic, when plotted as a function of input power, will have a slope of two on a log scale, and the third harmonic will have a slope of three. This power law is fundamental to the use of intercept points by radio-frequency circuit designers to predict distortion levels from a knowledge of the input signal level. It is shown in this paper that the standard formulation of field effect transistor (FET) models violates this power law for FETs biased at Vds=0. The problem is shown to arise from discontinuities in the high order derivatives which occur because Vgsand Vgd are interchanged in the computer models when Vds switches sign. A model is presented which does not switch these variables and the new model is shown to follow the correct power law
Keywords :
MOSFET; Schottky gate field effect transistors; circuit simulation; harmonic distortion; resistors; semiconductor device models; FET resistors; computer simulation model; discontinuities; distortion; harmonic distortion; high order derivatives; input signal level; intercept points; radio-frequency circuit design; Computational modeling; Computer simulation; FETs; Harmonic distortion; MESFETs; MOSFET circuits; Radio frequency; Resistors; Taylor series; Voltage;
fLanguage :
English
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
Publisher :
ieee
ISSN :
0278-0070
Type :
jour
DOI :
10.1109/43.863638
Filename :
863638
Link To Document :
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