Title :
Instrumentation effects on the detection of resistance transients during accelerated testing of VLSI interconnects
Author :
Fahrenkrug, Craig C F ; Head, Linda M.
Author_Institution :
Symtx Inc., West Endicott, NY, USA
fDate :
8/1/2000 12:00:00 AM
Abstract :
Some researchers have proposed using noise as an interconnect reliability tool. Often, however, noise spectral density has been used without concurrently examining the fluctuations in the time-domain which generate the noise spectra. Recently, the presence of abrupt changes in resistance (ACR´s) has been documented in VLSI interconnects at accelerated stressing conditions. These ACR´s are investigated here to identify their impact on typical spectra produced in noise measurements. Three results are reported in this paper, First, the presence of ACR´s usually coincides with generation of 1/ℱ2 noise. Second, the location of the ACR in the Fast Fourier Transform window is significant. Third, cross-correlation techniques can be used to identify ACR´s in the time-domain signal
Keywords :
VLSI; aluminium; electric noise measurement; electromigration; fast Fourier transforms; fault location; integrated circuit interconnections; integrated circuit noise; integrated circuit reliability; integrated circuit testing; life testing; time-domain analysis; transients; Al; VLSI interconnects; accelerated stressing; accelerated testing; cross-correlation; electromigration; fast Fourier transform; fluctuations; instrumentation effects; interconnect reliability; noise measurement; noise spectra; noise spectral density; resistance transients; time-domain; time-domain signal; Acceleration; Fast Fourier transforms; Fluctuations; Instruments; Noise generators; Noise measurement; Power capacitors; Signal processing; Time domain analysis; Very large scale integration;
Journal_Title :
Instrumentation and Measurement, IEEE Transactions on