• DocumentCode
    1374505
  • Title

    High Ge Content of SiGe Channel pMOSFETs on Si (110) Surfaces

  • Author

    Lee, M.H. ; Chang, S.T. ; Maikap, S. ; Peng, C.-Y. ; Lee, C.-H.

  • Author_Institution
    Inst. of Electro-Opt. Sci. & Technol., Nat. Taiwan Normal Univ., Taipei, Taiwan
  • Volume
    31
  • Issue
    2
  • fYear
    2010
  • Firstpage
    141
  • Lastpage
    143
  • Abstract
    The characteristics of Si0.2Ge0.8 channel PFETs fabricated directly on Si (110) surfaces have been investigated. The saturation drain current and the hole mobility of a Si0.2Ge0.8 (110) PFET are enhanced by 70% and by 80% for the <110> channel, as compared with that of a bulk Si (110) PFET. For comparison with a Si (100) PFET, a SiGe <110>/(110) PFET has ~ 200% hole mobility enhancement. The performance difference of the SiGe <110>/(110) and <100>/(110) PFET is about 2.7 times when considering mobility, and these effects are explained.
  • Keywords
    Ge-Si alloys; MOSFET; hole mobility; semiconductor materials; Si; Si(110) surface; Si0.2Ge0.8; Si0.2Ge0.8 (110) PFET; SiGe channel pMOSFET; hole mobility; saturation drain current; (110); Mobility; SiGe; orientation; strain;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2009.2036138
  • Filename
    5371936
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1374505