DocumentCode :
1374505
Title :
High Ge Content of SiGe Channel pMOSFETs on Si (110) Surfaces
Author :
Lee, M.H. ; Chang, S.T. ; Maikap, S. ; Peng, C.-Y. ; Lee, C.-H.
Author_Institution :
Inst. of Electro-Opt. Sci. & Technol., Nat. Taiwan Normal Univ., Taipei, Taiwan
Volume :
31
Issue :
2
fYear :
2010
Firstpage :
141
Lastpage :
143
Abstract :
The characteristics of Si0.2Ge0.8 channel PFETs fabricated directly on Si (110) surfaces have been investigated. The saturation drain current and the hole mobility of a Si0.2Ge0.8 (110) PFET are enhanced by 70% and by 80% for the <110> channel, as compared with that of a bulk Si (110) PFET. For comparison with a Si (100) PFET, a SiGe <110>/(110) PFET has ~ 200% hole mobility enhancement. The performance difference of the SiGe <110>/(110) and <100>/(110) PFET is about 2.7 times when considering mobility, and these effects are explained.
Keywords :
Ge-Si alloys; MOSFET; hole mobility; semiconductor materials; Si; Si(110) surface; Si0.2Ge0.8; Si0.2Ge0.8 (110) PFET; SiGe channel pMOSFET; hole mobility; saturation drain current; (110); Mobility; SiGe; orientation; strain;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2009.2036138
Filename :
5371936
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1374505
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