Title :
Single-Event Damages Caused by Heavy Ions Observed in AlGaN/GaN HEMTs
Author :
Kuboyama, Satoshi ; Maru, Akifumi ; Shindou, Hiroyuki ; Ikeda, Naomi ; Hirao, Toshio ; Abe, Hiroshi ; Tamura, Takashi
Author_Institution :
Japan Aerosp. Exploration Agency, Tsukuba, Japan
Abstract :
It was demonstrated that several kinds of permanent damage were introduced by heavy ions in AlGaN/GaN HEMTs similar to SiC devices. A new mode of damage attributable to the transistor structure was also identified in addition to the damage observed similarly in SiC devices.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; ion beam effects; wide band gap semiconductors; AlGaN-GaN; AlGaN-GaN HEMT; SiC devices; heavy ions; permanent damage; single-event damages; transistor structure; Aluminum gallium nitride; Gallium nitride; HEMTs; Ions; Leakage current; Logic gates; AlGaN/GaN HEMTs; heavy ions; radiation damage; single-event effects;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2011.2171504
